october 1998 f ds693 0 a dual n-c hannel, logic level, powertrench tm mosfet general description features absolute maximum ratings t a = 25 o c unless otherwise noted symbol parameter f ds693 0 a units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 5.5 a - pulsed 2 0 p d power dissipation for dual operation (note 1) 2 w power dissipation for single operation (note 1a) 1.6 w (note 1b) 1 (note 1c) 0.9 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a ) 78 c/w r q jc thermal resistance, junction-to-case (note 1) 40 c/w fds693 0 a rev.d 5.5 a, 3 0 v. r ds(on ) = 0.040 w @ v gs = 10 v r ds(on ) = 0.055 w @ v gs = 4.5 v . fast switching speed . low gate charge (typical 5 nc). high performance t rench technology for extremely low r ds(on) . high power and current handling capability. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 these n-channel logic level mosfets are produced using fairchild semiconductor 's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance . these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. s1 d1 s2 g1 so-8 d2 d2 d1 g2 fds 6930a pin 1 1 5 7 8 2 3 4 6 ? 1998 fairchild semiconductor corporation
electrical characteristics ( t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 20 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j = 5 5c 10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.5 3 v d v gs(th) / d t j gate threshold voltage temp. coefficient i d = 250 a , referenced to 25 o c -4 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.032 0.04 w t j =12 5c 0.048 0.068 v gs = 4.5 v, i d = 4.8 a 0.044 0.055 i d(on) on-state drain current v gs = 10 v, v ds = 5 v 20 a g fs forward transconductance v ds = 15 v, i d = 5.5 a 12 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 460 pf c oss output capacitance 115 pf c rss reverse transfer capacitance 45 pf switching ch aracteristics (note 2) t d(on ) turn - on delay time v ds = 15 v, i d = 1 a 5 11 ns t r turn - on rise time v gs = 10 v , r gen = 6 w 8 17 ns t d(off) turn - off delay time 17 28 ns t f turn - off fall time 13 24 ns q g total gate charge v ds = 5 v, i d = 5.5 a, 5 7 nc q gs gate-source charge v gs = 5 v 2 nc q gd gate-drain charge 0.9 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2 ) 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. fds693 0 a rev.d c. 13 5 o c/w on a 0.003 in 2 pad of 2oz copper. b . 12 5 o c/w on a 0.02 in 2 pad of 2oz copper. a . 78 o c/w on a 0.5 in 2 pad of 2oz copper.
fds693 0 a rev.d 0 1 2 3 4 5 0 6 12 18 24 30 v , drain-source voltage (v) i , drain-source current (a) ds d 3.5v 3.0v v =10v gs 4.0v 5.0v 4.5v 6.0v typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with drain current and gate voltage . -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v = 10v gs i = 5.5a d figure 3. on-resistance variation with temperature . 1 2 3 4 5 0 3 6 9 12 15 v , gate to source voltage (v) i , drain current (a) v =5.0v ds gs d t = -55c j 125c 25c figure 5 . transfer characteristics. figure 6 . body diode forward voltage varia tion with source current and temperature. figure 4 . on-resistance variation with gate-to -source voltage. 0 6 12 18 24 30 0 1 2 3 4 i , drain current (a) drain-source on-resistance d v = 3.0v gs r , normalized ds(on) 10v 4.0 v 3.5 v 5.5 v 4.5 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.01 0.1 1 20 v , body diode forward voltage (v) i , reverse drain current (a) 25c -55c v = 0v gs sd s t = 125c j 2 4 6 8 10 0 0.05 0.1 0.15 0.2 v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) 125c 25c i = 2.5a d
fds693 0 a rev.d figure 10. single pulse maximum power dissipation . figure 8. capacitance characteristics . figure 7 . gate charge characteristics. figure 9. maximum safe operating area . typical electrical characteristics 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r =135 c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 figure 11 . transient thermal response curve . thermal characterization performed using the conditions described in n ote 1c. transient thermal response will change depending on the circuit board design. 0 2 4 6 8 10 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 5.5a d v = 5v ds 10v 15v 0.1 0.2 0.5 1 2 5 10 30 50 100 200 500 1000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss 0.1 0.5 1 2 5 10 30 50 0.01 0.05 0.5 2 10 50 100 v , drain-source voltage (v) i , drain current (a) rds(on) limit d a dc ds 1s 100ms 10ms 1ms 10s v =10v single pulse r =135c/w t =25c q ja gs a 100us 0.01 0.1 0.5 10 50 100 300 0 5 10 15 20 25 30 single pulse time (sec) power (w) single pulse r =135 c/w t = 25c q ja a
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